当前位置:首页 > 北京航※空航天大学」 > 学校老师 >
冀会辉老师简介
教授课程
半导体【物理与器件
---> 主要研√究领域
集成电路设计;
集成电路工艺模拟
---> 正在◤研究项目
模拟集成电路的分析与设计
---> 最近发表论著
HuihuiJi,Min Yu, Hao Shi, Xiaokang Shi, Ru Huang, Xing Zhang, etc.,“Molecular dynamics simulation of ion implantation into hafnium dioxide”,Nuclear instruments and methods in physics research B, 2004, Vol.226, P 537.
HuihuiJi,Min Yu,Hao Shi,ect., “Simulation of implantation into HfO2 by MD method”, IWJT international conference at Shanghai, 2004, P 313-316.
Huihui Ji, Liming Ren, Min Yu, etc., “Plasma doping process for SOI technology”, the 6th National Symposium on SOI Technology. (Chinese)
Huihui Ji, Qingshan Li, “Absorption and photoluminescence spectra of PhB/SiO2 Gel”, Journal of Optoelectronics & Laser, 2002, Vol.13, No.9, P969. (Chinese)
Huihui Ji, Qingshan Li, “Photoluminescence of phodamine B doped SiO2 gels”, Chinese journal of luminescence,2002,Vol.23, No.3, P 282. (Chinese)
Xiaokang Shi, Min Yu, Huihui Ji, “A new simulation method of ion implantation”,IWJT 2004, 2004, p 305-308.
Min Yu, Rong Wang, Huihui Ji, Defects in Ion Implantation and Annealing Studied by Atomistic Model, ICSICT 2004.
Min Yu,Ru Huang,Xiaokang Shi, Huihui Ji, “Studying shallow junction technology by atomistic modeling”,IWJT 2004, p 297-301.
Rong Wang, Min Yu, Kai Zhan, Xiaokang Shi, Huihui Ji, “A New Damage Model for Ion Implantation Simulation with Molecular Dynamics Method”, ICSICT 2004.-->暂无简介
半导体【物理与器件
---> 主要研√究领域
集成电路设计;
集成电路工艺模拟
---> 正在◤研究项目
模拟集成电路的分析与设计
---> 最近发表论著
HuihuiJi,Min Yu, Hao Shi, Xiaokang Shi, Ru Huang, Xing Zhang, etc.,“Molecular dynamics simulation of ion implantation into hafnium dioxide”,Nuclear instruments and methods in physics research B, 2004, Vol.226, P 537.
HuihuiJi,Min Yu,Hao Shi,ect., “Simulation of implantation into HfO2 by MD method”, IWJT international conference at Shanghai, 2004, P 313-316.
Huihui Ji, Liming Ren, Min Yu, etc., “Plasma doping process for SOI technology”, the 6th National Symposium on SOI Technology. (Chinese)
Huihui Ji, Qingshan Li, “Absorption and photoluminescence spectra of PhB/SiO2 Gel”, Journal of Optoelectronics & Laser, 2002, Vol.13, No.9, P969. (Chinese)
Huihui Ji, Qingshan Li, “Photoluminescence of phodamine B doped SiO2 gels”, Chinese journal of luminescence,2002,Vol.23, No.3, P 282. (Chinese)
Xiaokang Shi, Min Yu, Huihui Ji, “A new simulation method of ion implantation”,IWJT 2004, 2004, p 305-308.
Min Yu, Rong Wang, Huihui Ji, Defects in Ion Implantation and Annealing Studied by Atomistic Model, ICSICT 2004.
Min Yu,Ru Huang,Xiaokang Shi, Huihui Ji, “Studying shallow junction technology by atomistic modeling”,IWJT 2004, p 297-301.
Rong Wang, Min Yu, Kai Zhan, Xiaokang Shi, Huihui Ji, “A New Damage Model for Ion Implantation Simulation with Molecular Dynamics Method”, ICSICT 2004.-->暂无简介
同校其他教师
新闻公告
- 自动化学院“云上博论”暨优秀大学生夏令营专场举办 07-15
- “红楼寻梦”实践队开展《红楼梦》研读座谈会 07-15
- 北航红十字会随爱行支教队举行出征仪式 07-15
- 北航召开科研课堂试点工作研讨会 07-15
- 北航2021年优秀大学生航空发动机夏令营举办 07-14
高考招生
- 北京航空航天大学2018年招生『章程 08-05
- 北京航空航天大学2016年招生章◇程 08-05
- 北京航空航天大学2017年招卐生章程 08-05
- 北京航空航天大学2015年招生章程 08-05
- 北京航空航天大学2014年招生章程 08-05
- 北京航空航天大学2013年招生章程 08-05
- 北京航空航天大学2012年招生章程 08-05
- 北京航空航天大学2011年招生章程 08-05
- 北京航空航天大学2009年招生章程 08-05
- 北京航空航天大学2010年招生章程 08-05